MMBTA14 K3D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA14 SOT-23 TRANSISTOR (NPN) Unit : mm FEATURES Darlington Amplifier 1. BASE 2. EMITTER 3. COLLECTOR Marking : K3D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC Collector Power Dissipation 300 mW 417 ℃/W 150 ℃ RθJA Thermal Resistance from Junction to Ambient TJ Junction Temperature Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 100μA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 10 V Collector cut-off current ICBO* VCB=30 V, IE=0 0.1 μA Emitter cut-off current IEBO* VEB= 10V ,IC=0 0.1 μA hFE(1) * VCE=5V, IC= 10mA 10000 hFE(2) * VCE=5V, IC= 100mA 20000 Collector-emitter saturation voltage VCE (sat)* IC=100mA, IB=0.1mA 1.5 V Base-emitter saturation voltage VBE (sat) * IC=100mA, IB=0.1mA 2 V Base-emitter voltage VBE * VCE=5V,IC= 100mA 2.0 V Transition frequency fT Collector output capacitance Cob DC current gain VCE=5V, IC= 10mA f=100MHz VCB=10V,IE=0,f=1MHz 125 MHz 12 pF * Pulse Test : pulse width≤300μs,duty cycle≤2%. B,Nov,2011 Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ 2uA 100 —— IC COMMON EMITTER VCE=5V 100K Ta=100℃ hFE 1.8uA 80 hFE 300K 1.6uA DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 120 MMBTA14 1.4uA 60 1.2uA 1uA 40 0.8uA Ta=25℃ 10K 0.6uA 20 0.4uA IB= 0.2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1K 7 Ta=25℃ 600 Ta=100 ℃ β=1000 1 10 100 COLLECTOR CURRENT IC 300 —— IC 100 VBEsat —— 2000 800 400 10 COLLECTOR CURRENT IC —— 1 VCE (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 6 IC IC 1500 Ta=25℃ 1000 Ta=100 ℃ β=1000 500 300 1 10 (mA) COLLECTOR CURRENT VBE Cob/Cib 20 300 100 —— IC (mA) VCB/VEB f=1MHz IE=0/IC=0 100 (mA) Ta=25 ℃ (pF) Cob CAPACITANCE T =2 5℃ a T =1 00℃ a 10 Cib CT 10 IC COLLECTOR CURRENT 300 (mA) 1 COMMON EMITTER VCE=5V 0.1 0.0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 fT 200 —— 10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) IC PC 350 —— V 20 (V) Ta COLLECTOR POWER DISSIPATION PC (mW) 100 TRANSITION FREQUENCY fT (MHz) 300 COMMON EMITTER VCE=5V Ta=25℃ 10 3 10 COLLECTOR CURRENT (mA) 200 150 100 50 0 100 IC 250 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃ ) B,Nov,2011